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"Humanities and Science University Journal" №35 (Physical and mathematical, biological and technical science), 2017

Dielectric Relaxation and Charge Transfer in Structures Based on Ge2Sb2Te5 Chalcogenide System

R. A. Castro, A. A. Kononov, Y. Saito, J. Tominaga, A. V. Kolobov
Price: 50 руб.
 Results of studies on dielectric relaxation and charge transfer in thin
layers of the Ge-Sb-Te system are presented. The observed dispersion
of dielectric permittivity and the existence of dielectric loss maxima
in the low-frequency region are explained by structural features of
the crystalline and amorphous phases. The power-law dependence of
specific conductivity on frequency suggests the existence of a hopping
conduction mechanism determined by the jumps of charge carriers
between localized states in the bandgap.

Keywordsdielectric relaxation, charge transfer, chalcogenide system.
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